Rapid Thermal Processing of Implanted GaN up to 1500°C

Thermal Model of Rapid Thermal Processing Systems

Continuously shrinking device parameters and the enlargement of wafer diameters in semiconductor industry require best temperature homogeneity in Rapid Thermal Processing (RTP). This together with the requirement of high ramp rates in the range of 200 °C s as advantageously used in ultra shallow junction processes [1] challenges temperature control in RTP technology. In order to design advanced...

Blistering of H-implanted GaN

Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: ~i! ion energy ~from 20 to 150 keV!, ~ii! ion dose ~up to 1.2310 cm!, ~iii! implantation temperature ~from 2196 to 250 °C!, and ~iv! annealing temperature ~up to 900 °C!. Results show that both the onset of blistering ...

Rapid thermal processing of magnetic materials

The rapid thermal processing (RTP) technique features dynamic control of temperature, which permits high heating and cooling rates that cannot be reached with conventional furnace treatments. In recent years, RTP has been increasingly applied to the processing of magnetic materials. The controllable heating profiles provide an approach for the deliberate construction of materials structure via ...

Cathodoluminescence depth profiling of ion-implanted GaN

Characterization of Ni-implanted GaN and SiC

High concentrations ( /10 cm ) of Ni were introduced into GaN and SiC by ion implantation at 350 8C. On subsequent annealing at 700 8C, there was more residual lattice damage in GaN compared to SiC. Both materials showed ferromagnetism with transition temperatures below 50 K. No secondary phases could be detected by transmission electron microscopy (TEM) or selected area diffraction in either G...